KM641001B/bl cmos sram preliminary rev. 3.0 - 1 - july 1998 document title 256kx4 bit (with oe ) high speed static ram(5v operating), evolutionary pin out. revision history the attached data sheets are prepared and approved by samsung electronics. samsung electronics co., ltd. reserve the right to c hange the specifications. samsung electronics will evaluate and reply to your requests and questions on the parameters of this device. if you have any ques- tions, please contact the samsung branch office near your office, call or contact headquarters. rev. no. rev. 0.0 rev.1.0 rev. 2.0 rev.3.0 remark design target preliminary final final history initial release with design target. release to preliminary data sheet. 1. replace design target to preliminary. release to final data sheet. 1. delete preliminary. 2. delete 17ns, l-version and industrial temperature part. 3. delete v oh1 =3.95v. 4. delete data retention characteristics and wave form. 5. relex operating current 1. add low power version. 2. add data retenttion chcracteristics speed previous now 15ns 120ma 120ma 17ns 110ma - 20ns 100ma 118ma draft data feb. 1st 1997 jun. 1st 1997 feb. 6th 1998 jul. 28th 1998
KM641001B/bl cmos sram preliminary rev. 3.0 - 2 - july 1998 256k x 4 bit (with oe )high-speed cmos static ram general description features ? fast access time 15, 20ns(max.) ? low power dissipation standby (ttl) : 20 ma (max.) (cmos) : 5 ma (max.) 1ma(max) l-ver. only operating KM641001B/bl - 15 : 120 ma (max.) KM641001B/bl - 20 : 118 ma (max.) ? single 5.0v 10% power supply ? ttl compatible inputs and outputs ? fully static operation - no clock or refresh required ? three state outputs ? standard pin configuration KM641001B/blj : 28-soj-400a pin function pin name pin function a 0 - a 17 address inputs we write enable cs chip select oe output enable i/o 1 ~ i/o 4 data inputs/outputs v cc power(+5.0v) v ss ground n.c no connection the KM641001B is a 1,048,576-bit high-speed static random access memory organized as 262,144 words by 4 bits. the KM641001B/bl uses 4 common input and output lines and has at output enable pin which operates faster than address access time at read cycle. the device is fabricated using samsung s advanced cmos process and designed for high-speed circuit technology. it is particularly well suited for use in high-density high-speed system applications. the KM641001B/bl is pack- aged in a 400 mil 28-pin plastic soj. pin configuration (top view) clk gen. i/o 1 ~i/o 4 cs we oe functional block diagram r o w s e l e c t data cont. column select clk gen. pre-charge circuit memory array 512 rows 512x4 columns i/o circuit & soj 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 vcc a 17 a 16 a 15 a 14 a 13 a 12 a 11 n.c i/o 4 i/o 3 i/o 2 i/o 1 we a 0 a 1 a 2 a 3 a 4 a 5 a 6 a 7 a 8 a 9 a 10 cs oe vss a 9 a 10 a 11 a 12 a 13 a 14 a 15 a 16 a 17 a 0 a 1 a 2 a 3 a 4 a 5 a 6 a 7 a 8
KM641001B/bl cmos sram preliminary rev. 3.0 - 3 - july 1998 recommended dc operating conditions (t a =0 to 70 c) note: * v il (min) = -2.0v a.c(pulse width 10ns) for i 20 ma ** v ih (max) = v cc + 2.0v a.c (pulse width 10ns) for i 20 ma parameter symbol min typ max unit supply voltage v cc 4.5 5.0 5.5 v ground v ss 0 0 0 v input high voltage v ih 2.2 - v cc +0.5** v input low voltage v il -0.5* - 0.8 v dc and operating characteristics (t a =0 to 70 c, vcc=5.0v 10%, unless otherwise specified) parameter symbol test conditions min max unit input leakage current i li v in =v ss to v cc -2 2 m a output leakage current i lo cs =v ih or oe =v ih or we =v il v out =v ss to v cc -2 2 m a operating current i cc min. cycle, 100% duty cs =v il, v in =v ih or v il, i out =0 ma 15ns - 120 ma 20ns - 118 standby current i sb min. cycle, cs =v ih - 20 ma i sb1 f=0mhz, cs 3 v cc -0.2v, v in 3 v cc -0.2v or v in 0.2v normal - 5 ma l-ver - 1 ma output low voltage level v ol i ol =8 ma - 0.4 v output high voltage level v oh i oh =-4 ma 2.4 - v capacitance* (t a =25 c, f=1.0mhz) * note : capacitance is sampled and not 100% tested. item symbol test conditions min max unit input/output capacitance c i/o v i/o =0v - 8 pf input capacitance c in v in =0v - 6 pf absolute maximum ratings* * stresses greater than those listed under "absolute maximum ratings" may cause permanent damage to the device. this is a stress r ating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this spec ification is not implied. exposure to absolute maximum rating conditions for extended periods may affect reliability. parameter symbol rating unit voltage on any pin relative to v ss v in , v out -0.5 to 7.0 v voltage on v cc supply relative to v ss v cc -0.5 to 7.0 v power dissipation p d 1.0 w storage temperature t stg -65 to 150 c operating temperature t a 0 to 70 c
KM641001B/bl cmos sram preliminary rev. 3.0 - 4 - july 1998 test conditions parameter value input pulse levels 0v to 3v input rise and fall times 3ns input and output timing reference levels 1.5v output loads see below ac characteristics (t a =0 to 70 c, v cc =5.0v 10%, unless otherwise noted.) read cycle parameter symbol KM641001B/bl-15 KM641001B/bl-20 unit min max min max read cycle time t rc 15 - 20 - ns address access time t aa - 15 - 20 ns chip select to output t co - 15 - 20 ns output enable to valid output t oe - 8 - 10 ns chip enable to low-z output t lz 3 - 3 - ns output enable to low-z output t olz 0 - 0 - ns chip disable to high-z output t hz 0 6 0 8 ns output disable to high-z output t ohz 0 6 0 8 ns output hold from address change t oh 3 - 3 - ns chip selection to power up time t pu 0 - 0 - ns chip selection to power downtime t pd - 15 - 20 ns output loads(a) output loads(b) d out 5pf* 480 w 255 w for t hz , t lz , t whz , t ow , t olz & t ohz +5.0v d out 30pf* 480 w 255 w +5.0v * including scope and jig capacitance
KM641001B/bl cmos sram preliminary rev. 3.0 - 5 - july 1998 write cycle parameter symbol KM641001B/bl-15 KM641001B/bl-20 unit min max min max write cycle time t wc 15 - 20 - ns chip select to end of write t cw 10 - 12 - ns address set-up time t as 0 - 0 - ns address valid to end of write t aw 10 - 12 - ns write pulse width( oe high) t wp 10 - 12 - ns write pulse width( oe low) t wp1 15 - 20 - ns write recovery time t wr 0 - 0 - ns write to output high-z t whz 0 8 0 10 ns data to write time overlap t dw 7 - 9 - ns data hold from write time t dh 0 - 0 - ns end write to output low-z t ow 3 - 3 - ns address data out previous valid data valid data timming diagrams timing waveform of read cycle(1) (address controlled , cs = oe =v il , we =v ih ) t aa t rc t oh timing waveform of read cycle(2) ( we =v ih ) cs address oe data ou t t aa t olz t lz(4,5) t oh t rc t oe t co t pu t pd t hz(3,4,5) 50% 50% v cc current i cc i sb valid data t ohz
KM641001B/bl cmos sram preliminary rev. 3.0 - 6 - july 1998 notes (read cycle) 1. we is high for read cycle. 2. all read cycle timing is referenced from the last valid address to the first transition address. 3. t hz and t ohz are defined as the time at which the outputs achieve the open circuit condition and are not referenced to v oh or v ol levels. 4. at any given temperature and voltage condition, t hz (max.) is less than t lz (min.) both for a given device and from device to device. 5. transition is measured 200mv space from steady state voltage with load(b). this parameter is sampled and not 100% tested. 6. device is continuously selected with cs =v il. 7. address valid prior to coincident with cs transition low. 8. for common i/o applications, minimization or elimination of bus contention conditions is necessary during read and write cycl e. timing waveform of write cycle(1) ( oe = clock) address cs t wp(2) t dw t dh valid data we data in data out t wc t wr(5) t aw t cw(3) high-z(8) high-z oe t ohz(6) t as(4) timing waveform of write cycle(2) ( oe =low fixed) address cs t wp1(2) t dw t dh t ow t whz(6) valid data we data in data out t wc t as(4) t wr(5) t aw t cw(3) (10) (9) high-z(8) high-z
KM641001B/bl cmos sram preliminary rev. 3.0 - 7 - july 1998 notes (write cycle) 1. all write cycle timing is referenced from the last valid address to the first transition address. 2. a write occurs during the overlap of a low cs and we . a write begins at the latest transition cs going low and we going low a write ends at the earliest transition cs going high or we going high. t wp is measured from the beginning of write to the end of write. 3. t cw is measured from the later of cs going low to end of write. 4. t as is measured from the address valid to the beginning of write. 5. t wr is measured from the end of write to the address change. t wr applied in case a write ends as cs or we going high. 6. if oe , cs and we are in the read mode during this period, the i/o pins are in the output low-z state. inputs of opposite phase of the output must not be applied because bus contention can occur. 7. for common i/o applications, minimization or elimination of bus contention conditions is necessary during read and write cycl e. 8. if cs goes low simultaneously with we going or after we going low, the outputs remain high impedance state. 9. dout is the read data of the new address. 10.when cs is low : i/o pins are in the output state. the input signals in the opposite phase leading to the output should not be applied. timing waveform of write cycle(3) ( cs =controlled) address cs t aw t dw t dh valid data we data in data out high-z high-z(8) t cw(3) t wp(2) t as(4) t wc t wr(5) high-z high-z t lz t whz(6)
KM641001B/bl cmos sram preliminary rev. 3.0 - 8 - july 1998 functional description * note : x means don t care. cs we oe mode i/o pin supply current h x x* not select high-z i sb , i sb1 l h h output disable high-z i cc l h l read d out i cc l l x write d in i cc data retention characteristics* (t a =0 to 70 c) note: the above parameters are also guaranteed at industrial temperature range. * l-ver only. parameter symbol test condition min. typ. max. unit v cc for data retention v dr cs 3 v cc -0.2v 2.0 - 3.6 v data retention current i dr v cc =3.0v, cs 3 v cc -0.2v v in 3 v cc -0.2v or v in 0.2v - - 0.4 ma data retention set-up time t sdr see data retention wave form(below) 0 - - ns recovery time t rdr 5 - - ms data retention wave form v cc 5.0v 2.2v v dr cs gnd data retention mode cs 3 v cc - 0.2v t sdr t rdr cs controlled
KM641001B/bl cmos sram preliminary rev. 3.0 - 9 - july 1998 package dimensions units:millimeters/inches 0.95 #1 28-soj-400a #28 18.41 0.12 0.725 0.005 ( ) 0.0375 1 0 . 1 6 0 . 4 0 0 + 0.10 max 18.82 0.741 0.20 - 0.05 + 0.10 0.008 - 0.002 9.40 0.25 0.370 0.010 max 0.148 3.76 1.27 ( ) 0.050 1.32 ( ) 0.052 + 0.10 0.43 - 0.05 + 0.004 0.017 - 0.002 + 0.10 0.71 - 0.05 + 0.004 0.028 - 0.002 #14 #15 11.18 0.12 0.440 0.005 min 0.69 0.027 1.27 0.050 0.004 0.10 max
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